BEGIN:VCALENDAR
PRODID:-//HKUST Drupal Platform//EN
VERSION:2.0
BEGIN:VTIMEZONE
TZID:Asia/Hong_Kong
BEGIN:STANDARD
DTSTART:20071104T020000
TZOFFSETFROM:+0700
TZOFFSETTO:+0800
TZNAME:HKT
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP;TZID=Asia/Hong_Kong:20260517T195916
DTSTART;TZID=Asia/Hong_Kong:20170724T160000
DTEND;TZID=Asia/Hong_Kong:20170724T170000
LOCATION:Room 4475 (Lifts 25-26), HKUST
SUMMARY:Fabrication of BN Encapsulated FET Devices Using Atomically Thin 2D Materials
UID:2235
END:VEVENT
END:VCALENDAR