Abstract
Pattern formation in micron scale is vital in many fields of application including electronic, photonic, electromechanical and medical devices as well as various sensors. In particular, precise optical manipulation and rapid steering of the laser enables laser-based printing. However, metallic material laser printing requires pre-prepared nano-metal particle that to be further assembled. More importantly, no transistor based substrate such as Silicon(Si/SiO2) has been ever reported to be direct laser written on. In this work, direct laser writing(DLW) of conductive metal on Si/SiO2 and diamond has been achieved. Micro-scale gold wire was measured to have about 8". On top of this, n-type MoS2 field effect transistor was fabricated using DLW. In particular, it exhibited a linear ohmic current to voltage relation. As such, we found that using a modified scanning microscopy set-up, metallic and semiconducting material can be directly laser patterned on various substrates. In addition, the photo-induced reduction process can trigger metallic phase transition in transition metal dichalcogenides to achieve ohmic contact. In this thesis, it will be demonstrated that DLW can be manifested as a new device and sample probe fabrication method with great potential.